Abstract:A low-cost, high-efficiency, and catalyst-free method for fabricating well-aligned and uniform semipolar InGaN nanorods (NRs) by molecular beam epitaxy (MBE) is proposed using an optimized patterned sapphire substrate (PSS) with high Miller index crystallographic planes. The dense, obliquely aligned, and high-quality semipolar (11[combining macron]02) InGaN NRs are fabricated on hexagonal pyramid arrays of the PSS for the first time in this work. A unique semipolar (11[combining macron]02) and polar (0001) InGaN NR array composite structure is thus achieved on a hexagonal pyramid PSS. The connected, uniform, and obliquely aligned NRs are formed on the PSS with cylindrical arrays. The cylindrical and hexagonal pyramid arrays of PSSs are structured by the standard photolithography process and etching techniques. Both pattern topography and crystallographic plane of the PSS significantly affect the morphology, dimension, and crystallographic orientation of InGaN NRs. It is clearly demonstrated that the PSS with exposed high Miller index crystallographic planes, with well-organized step-terrace structures, facilitates the growth of ordered and dense semipolar InGaN NRs. This work contributes to the thorough understanding of the nucleation and growth mechanisms of InGaN NRs on a high Miller index plane of the PSS with different topographies, as well as of those of controllably fabricating dense and uniform semipolar NRs, thus facilitating the fabrication of NR-based optoelectronic devices with enhanced performance.

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Selective Growth of GaN on Slope Cone-Shaped Patterned Sapphire Substrate

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

The Growth and Characterization of GaN Films on Cone-Shaped Patterned Sapphire by MOCVD

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

Surface Morphology of [112̄0]A-Plane GaN Growth by MOCVD on [11̄02]R-Plane Sapphire

Spatial Distribution of Crystalline Quality in N-Type Gan Grown on Patterned Sapphire Substrate

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar A-Plane Gan Grown on R-Sapphire Substrates

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition