Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Controllable step-flow growth of GaN on patterned freestanding substrate

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Initial Stages of Growth of the GaN(11 2) Layer on a Nano-structured Si(113) Substrate

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Miscut dependent surface evolution in the process of N-polar GaN$(000\bar 1)$ growth under N-rich condition

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition