Abstract:Planar nonpolar (11 (2) over bar0) a-plane GaN films have been grown by metalorganic chemical-vapor deposition directly on cone-shaped patterned r-plane sapphire substrates (PRSS) fabricated by dry etching. High-resolution X-ray diffractometers 2 theta-omega scan confirmed that the films grown on PRSS are solely a-plane oriented, and the full width at half maximum values (FWHM) of the X-ray rocking curves for (11 (2) over bar0) GaN along [0001](GaN) and [1 (1) over bar 00](GAN) were found to be 684 and 828", respectively. As compared to the film grown on conventional r-plane sapphire substrate which typically has (11 (2) over bar0) omega FWHM values of 900 and 2124" along [0001](GaN) and [1 (1) over bar 00](GaN) respectively, the film grown on PRSS exhibits overall reduced omega FWHM values, and much smaller anisotropy behavior of crystallinity with respect to the in-plane orientation. The surface morphology is also improved by utilizing the PRSS technique. Cross-sectional transmission electron microscopy analysis shows that the density of threading dislocations has been greatly reduced from similar to 1.0 x 10(10) cm(-2) above the flat sapphire regions to similar to 1.0 x 10(7) cm(-2) above the protruding cone patterns. The improvement of crystal quality and the increase of light extraction efficiency by using cone-shaped PRSS technique lead to a strong enhancement in the light emission of a-plane GaN films. These results indicate that growth of a-plane GaN films on cone-shaped PRSS shows promise for use in high-quality and high-costperformance nonpolar GaN based devices. (C) 2010 Elsevier B.V. All rights reserved.

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

High Quality A-Plane Gan Films Grown on Cone-Shaped Patterned R-Plane Sapphire Substrates

Growth of A-Plane GaN Films on R-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

High-quality Nonpolara-Plane GaN Epitaxial Films Grown Onr-Plane Sapphire Substrates by the Combination of Pulsed Laser Deposition and Metal–organic Chemical Vapor Deposition

Epitaxial growth of nonpolar GaN films on r -plane sapphire substrates by pulsed laser deposition

Epitaxy of M-Plane GaN on Nanoscale Patterned C-Plane Sapphire Substrates

Surface Morphology of [112̄0]A-Plane GaN Growth by MOCVD on [11̄02]R-Plane Sapphire

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Selective Growth of GaN on Slope Cone-Shaped Patterned Sapphire Substrate

Improved Crystal Quality of Nonpolar A-Plane GaN Based on the Nano Pattern Formed by the Annealed Thin Ni Layer

R-plane Sapphire Substrate for Non-polar GaN Film

Particular Electrical Quality of A-Plane Gan Films Grown on R-Plane Sapphire by Metal-Organic Chemical Vapor Deposition

Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar A-Plane Gan Grown on R-Sapphire Substrates

A Comparative Study on the Properties of C-Plane and A-Plane GaN Epitaxial Films Grown on Sapphire Substrates by Pulsed Laser Deposition

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Surface Morphology Of [11(2)Over-Bar0] A-Plane Gan Growth By Mocvd On [1(1)Over-Bar02] R-Plane Sapphire