Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

High quality non-polar a-plane AlN template grown on semi-polar r-plane sapphire substrate by three-step pulsed flow growth method

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

2-inch semi-polar (11̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy

The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate

The In-Plane-Two-Folders Symmetric <i>a</i>-Plane AlN Epitaxy on <i>r</i>-Plane Sapphire Substrate

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

Improved surface morphology and crystalline quality of semi-polar ( 11 2 ̅ 2 ) AlN epilayer with dual moderate-temperature-grown AlN interlayers

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Improved Surface Morphology and Crystalline Quality of Semi-Polar (112‾2) AlN Epilayer with Dual Moderate-Temperature-grown AlN Interlayers

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

High-quality Nonpolara-Plane GaN Epitaxial Films Grown Onr-Plane Sapphire Substrates by the Combination of Pulsed Laser Deposition and Metal–organic Chemical Vapor Deposition

Nonpolar A-Plane Gan Films Grown On Gamma-Lialo2 (3 0 2) Substrates By Low-Pressure Mocvd

Characterization of Optical Properties and Thermo-Optic Effect for Non-Polar AlGaN Thin Films Using Spectroscopic Ellipsometry

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Four-inch High Quality Crack-Free AlN Layer Grown on a High-Temperature Annealed AlN Template by MOCVD

Properties of Si-doped a-plane AlGaN layers

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition