Abstract:This work demonstrates large-area vertical GaN-on-GaN Schottky barrier diodes (SBDs) with different p-GaN terminations fabricated by the p-GaN regrowth on planar and nonplanar n-GaN structures and studies the leakage current in these regrown p-GaN terminations. The SBDs with planar p-GaN terminations demonstrate a higher breakdown voltage than the non-terminated SBDs. In contrast, the SBDs with nonplanar regrown terminations exhibit a significantly higher leakage current, which agrees with the tunneling behavior. The microscopic current mapping and local current–voltage (I–V) spectra are acquired using conductive atomic force microscopy (C-AFM) in the nonplanar regrown junction region. The local leakage currents and conduction types are derived from the I–V characteristics of the Schottky barrier between the metalized C-AFM tip and GaN. The dominant leakage path is revealed to be the tunneling across the Schottky barrier to the regrowth sidewall assisted by high-concentration interfacial impurities, followed by current flow along the regrowth sidewall. An ∼0.7 μm-wide n-type compensation layer is found next to the non-polar regrowth sidewall, which does not directly induce a major leakage path but moves the p-GaN away from the regrowth interface, thus weakening the p-GaN depletion of the sidewall interfacial impurities as well as facilitating the formation of a crowded electric field and tunneling at the Schottky contact to the regrowth region.

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Role of Electron Injection on Vertical Leakage in GaN-on-Si Epitaxial Layers

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

Hot Electron Assisted Vertical Leakage/breakdown in AlGaN/GaN Heterostructures on Si Substrates

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Origin of Leakage Current in Vertical GaN Devices with Nonplanar Regrown P-Gan

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

GaN-on-Si lateral power devices with symmetric vertical leakage: The impact of floating substrate

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Study of drain induced channel effects in vertical GaN junction field-effect transistors

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Monte Carlo Simulation of Band-to-band Tunneling in Silicon Devices

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures