Abstract:In this article, the origin of severe drain–source current kink effect in $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ MOSFETs has been exploited by means of temperature-and pulse-dependent current–voltage ( $\textit{I}$ – $\textit{V}\text{)}$ analysis. By reducing the pulse biasing widths, whereby the self-heating effect was negligible, the output characteristics were free of kink but with a rather low drain–source current density ( $\textit{I}_{\text{\text{DS}}}\text{)}$ at a high drain voltage ( $\textit{V}_{\text{\text{DS}}}\text{)}$ of 30 V. The current kink effect started to occur with a direct-current power consumption of approximately 850 mW/mm. The elimination of kink features was also observed together with a large $\textit{I}_{\text{\text{DS}}}$ at elevated temperatures over 100 $^{\circ}$ C. These observations indicate that the kink effect is strongly related to thermal activation of incomplete ionized donors by either the self-heating effect or external intentional heating stress rather than high electric field. In terms of temperature-dependent current output characteristics, the thermal activation energy is determined to be 136 meV, which is consistent with the reported unintentional donors with a high activation energy of 110 meV. It implies that additional electrons are thermally activated and emitted from the incomplete ionized donors in $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ channel or buffer layers through the self-heating effect, contributing to the channel conductivity modulation and the consequent current kink effect. These findings may bridge the knowledge gap between charge transport mechanisms and the reliability degradation of $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ power switches.

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Current Kink Effect in Β-Ga2o3 MOSFETs Induced by Incomplete Ionization of Donors

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Current Kink Effect in $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ MOSFETs Induced by Incomplete Ionization of Donors

An Improved ASM-HEMT Model for Kink Effect on GaN Devices

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

The Effect of Kink and Vertical Leakage Mechanisms in GaN-on-Si Epitaxial Layers

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT