Abstract:We present the first investigation into the dynamic characteristics of heterogeneous Ga2O3-on-SiC (GaOSiC) MOSFETs fabricated using an ion implantation process. A noteworthy aspect of this study is the intriguing impact of performance optimization behavior within the Ga2O3 layer under the quiescent drain voltage (VD-qb) stress. In contrast to the typical electron trapping-induced current collapse, the GaOSiC MOSFET exhibited an unexpected enhancement in current under specific VD-qb, which may be attributed to the residual hydrogen (H) induced by the ion-cutting process. By employing double-pulsed testing, we observed conventional current collapse over a range of durations, spanning from microseconds (μs) to milliseconds (ms), under VD-qb stress. Nevertheless, as the duration of the VD-qb stress was extended to tens of milliseconds, an anomalous reduction in dynamic RON was observed. We attribute this anomalous behavior to the configuration transition of H-related defects induced by the VD-qb stress, leading to an increased carrier concentration (ne) in Ga2O3. This performance enhancement behavior exhibits a significantly longer time constant when compared to the electron trapping process that typically leads to conventional current collapse. The activation energy (Ea) for electron trapping in the devices subjected to milliseconds of VD-qb stress corresponding to the conventional current collapse behavior is determined to be 0.7 eV. Furthermore, we found that, at room temperature, electron trapping predominantly occurs within the first few milliseconds of VD-qb stress. However, at elevated temperatures, the electron trapping process extends over several tens of seconds (equivalent to thousands of VD-qb periods), continuously degrading dynamic RON. Overall, our study provides novel insights into the dynamic performance of heterogeneous GaOSiC MOSFETs.

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