Abstract:The ultrawide bandgap (UWBG) (~4.8 eV) and melt-grown substrate availability of $beta $ -Ga2O3 give promise to the development of next-generation power electronic devices with dramatically improved size, weight, power, and efficiency over current state-of-the-art WBG devices based on 4H-SiC and GaN. Also, with recent advancements made in gigahertz frequency radio frequency (RF) applications, the potential for monolithic or heterogenous integration of RF and power switches has attracted researchers' attention. However, it is expected that Ga2O3 devices will suffer from self-heating due to the poor thermal conductivity of the material. Thermoreflectance thermal imaging and infrared thermography were used to understand the thermal characteristics of a MOSFET fabricated via homoepitaxy. A 3-D coupled electrothermal model was constructed based on the electrical and thermal characterization results. The device model shows that a homoepitaxial device suffers from an unacceptable junction temperature rise of ~1500 °C under a targeted power density of 10 W/mm, indicating the importance of employing device-level thermal managements to individual Ga2O3 transistors. The effectiveness of various active and passive cooling solutions was tested to achieve a goal of reducing the device operating temperature below 200 °C at a power density of 10 W/mm. Results show that flip-chip heterointegration is a viable option to enhance both the steady-state and transient thermal characteristics of Ga2O3 devices without sacrificing the intrinsic advantage of high-quality native substrates. Also, it is not an active thermal management solution that entails peripherals requiring additional size and cost implications.

A Large-Area Multi-Finger Β-Ga2o3 MOSFET and Its Self-Heating Effect

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

A Physics-Based Compact Electrothermal Model of Β-Ga2o3 MOSFETs for Device-Circuit Co-Design

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors

Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator

Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Experimental Investigation on Threshold Voltage Instability for β-Ga 2 O 3 MOSFET Under Electrical and Thermal Stress

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Experimental Investigation on Threshold Voltage Instability for Β-Ga2o3 MOSFET under Electrical and Thermal Stress

GaSb P-Channel Metal-Oxide-semiconductor Field-Effect Transistor and Its Temperature Dependent Characteristics

Realizing High-Performance β-Ga2O3 MOSFET by Using Variation of Lateral Doping: A TCAD Study

Heat Generation Mechanisms of Self-Heating Effects in Soi-Mos

Current Kink Effect in Β-Ga2o3 MOSFETs Induced by Incomplete Ionization of Donors

Realizing High-Performance Β-Ga₂o₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study