Abstract:Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

Influence of Substrate and Gate Insulator on the Thermal Characteristics of Β-Ga2o3 Field-Effect Transistors: A Simulation Study

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Strategy to Solve the Thermal Issue of Ultra-wide Bandgap Semiconductor Gallium Oxide Field Effect Transistor

Thermal conductance across β-Ga 2 O 3 -diamond van der Waals heterogeneous interfaces

Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Selective Direct Bonding of High Thermal Conductivity 3C-SiC Film to \b{eta}-Ga2O3 for Top-Side Heat Extraction

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Reduced temperature in lateral (Al x Ga1− x )2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Thermoelectric Design of Delta-Doped Β-(Alxga1-x)2o3/ga2o3 Metal Insulator Semiconductor High-Electron Mobility Transistors

Active Thermal Management of GaN-on-SiC HEMT with Embedded Microfluidic Cooling

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Interface Thermal Conductance Between Β-Ga2o3 and Different Substrates

High-Temperature Thermoelectric Characterization of III – V Semiconductor Thin Films by Oxide Bonding