Thermoelectric Design of Delta-Doped Β-(Alxga1-x)2o3/ga2o3 Metal Insulator Semiconductor High-Electron Mobility Transistors

Zhenguang Shao,Mengting Shao,Guang Qiao,Xuekun Hong,Hailin Yu,Xifeng Yang,Haifan You,Dunjun Chen,Changjiang Liu,Yushen Liu
DOI: https://doi.org/10.1109/jsen.2024.3491179
IF: 4.3
2024-01-01
IEEE Sensors Journal
Abstract:This work presents thermoelectric devices design of delta-doped β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) using TCAD simulations. The thermoelectric properties of devices were comprehensively investigated with various temperature, gate voltages, gate lengths, delta-doping concentrations and positions. With high delta-doping concentrations, a parasitic current channel is induced and that reduces electron chemical potential, resulting in high conductivity, a low Seebeck coefficient and a reduced turn on voltage. Moving delta-doping positions closer to the β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 interface enhances the concentration of the two-dimensional electron gas (2DEG), which screens the strong polar optical-phonon scattering and improves 2DEG mobility. For delta-doping positions at 1 nm, the power factor is improved due to quantum effect and energy filter effect, allowing the trade-off relationship between σ and S to be mitigated. Expanding gate lengths increases channel electron temperature at gate edge near drain side. These results provide valuable insights and crucial guidance for the design of high-performance β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 MIS-HEMTs for thermoelectric and temperature sensing applications.
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