Isoelectronic Re-Ge-codoped Higher Manganese Silicides with Enhanced Thermoelectric Properties Via Band Optimization, Charge Transfer, and Phonon Scattering

Zhiliang Li,Zheng Su,Hongxia Zhang,Qing Wang,Jianglong Wang,Xin Qian,Qian Cao,Zhihai Ding,Jing-Feng Li,Shufang Wang
DOI: https://doi.org/10.1016/j.jeurceramsoc.2023.04.022
IF: 5.7
2023-01-01
Journal of the European Ceramic Society
Abstract:Higher manganese silicide (HMS) is a naturally abundant, environmentally friendly, and mechanically robust P -type thermoelectric (TE) semiconductor. Isoelectronic doping elements Re and Ge are used to partially occupy cation (Mn) and anion (Si) sites, respectively. Compared with the single Re-doped strategy, TE performance is further improved in the isoelectronic double-doped Mn0.96Re0.04(Si0.96Ge0.04)1.79 composition. The electrical conductivity (-54.2 x 103 S m-1 at 823 K) is double that of pure HMS (-26.1 x 103 S m-1), whereas the power factor increases from-1.42 x 10-3 W m-1 K-2 to-1.80 x 10-3 W m-1 K-2 due to the increase in carrier con-centration caused by the decreased band gap (from 0.82 eV to 0.74 eV), as well as the embedding of the Si, Ge nanodispersions with low work functions. Furthermore, the substitution of Re and Ge increases the amounts of lattice defects, and the presence of nanoscale Ge precipitates cause the broadband phonon-scattering effect in the HMS matrix. Finally, the lattice thermal conductivity at 673 K decreases from-2.18 W m-1 K-1 to-1.60 W m-1 K-1. The zT value at 823 K increases by-36% from 0.45 to 0.61. The strategy of cation and anion double doping can effectively improve the TE properties of materials, which has significance for the optimization of other materials.
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