Thermoelectric Properties and Grain Refinement of Ge-substituted P-type Higher Manganese Silicide Alloy

樊东晓,姜广宇,戴春俊,谢涵卉,朱铁军,赵新兵
DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2012.03.026
2012-01-01
Abstract:Levitation melting was adopted to prepare Ge-substituted higher manganese silicide(HMS) thermoelectric Mn(Si1-xGex)1.733(x=0.004,0.006,0.008,0.010,0.012) alloys.Rapidly solidified HMS alloy powders were obtained by melt spinning to refine grain sizes.The X-ray diffraction(XRD) patterns showed that rapid solidification could reduce the content of MnSi metallic phase.Lattice distortion was produced by the substitution of Ge for Si,rendering a gradual shift of diffraction peaks to low-angle side in XRD patterns.Spark plasma sintering(SPS) was employed to prepare high density bulk alloy samples from both the levitation melted powder and the melt-spun powder.Thermoelectric performances of these samples were measured and compared.Results revealed that the thermal conductivity decreased in melt-spun samples and the electrical conductivity increased because of Ge doping.Optimization in these two aspects would enhance the dimensionless figure of merit ZT.Within the range of Ge substitution ratios in the experiment,the highest ZT value has been obtained when x=0.010.For the levitation melted samples,the maximum ZT value was 0.53 at 850K,and for the melt-spun samples,0.55 at 750K.
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