High-Temperature Thermoelectric Characterization of III – V Semiconductor Thin Films by Oxide Bonding

Je-Hyeong Bahk,Gehong Zeng,Joshua M. O. Zide,Hong Lu,Rajeev Singh,Di Liang,Ashok T. Ramu,Peter Burke,Zhixi Bian,Arthur C. Gossard,Ali Shakouri,John E. Bowers
DOI: https://doi.org/10.1007/s11664-010-1258-5
IF: 2.1
2010-01-01
Journal of Electronic Materials
Abstract:A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffer from the side-effect of substrate conduction at high temperatures. The proposed method includes complete substrate removal, high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-film ErAs:InGaAlAs metal/semiconductor nanocomposite grown on a lattice-matched InP substrate by molecular beam epitaxy, was transferred onto a sapphire substrate using the oxide bonding technique at 300°C, and its original InP substrate, which is conductive at high temperatures, was removed. Electrical conductivities and Seebeck coefficients were measured from room temperature to 840 K for this material on both the InP and sapphire substrates, and the measurement results clearly show that the InP substrate effect was eliminated for the sample on the sapphire substrate. A strain experiment has been conducted to investigate the effect of strain on electrical conductivity.
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