III-V/Si wafer bonding using transparent, conductive oxide interlayers

Adele C. Tamboli,Maikel F. A. M. van Hest,Myles A. Steiner,Stephanie Essig,Emmett E. Perl,Andrew G. Norman,Nick Bosco,Paul Stradins
DOI: https://doi.org/10.1063/1.4923444
IF: 4
2015-06-29
Applied Physics Letters
Abstract:We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.
physics, applied
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