Low Temperature Direct InP/SOI Wafer Bonding Based on Hydrophilic/hydrophobic Treatment

Kewei Gong,Changzheng Sun,Bing Xiong,Yi Luo
DOI: https://doi.org/10.1109/iciprm.2014.6880548
2014-01-01
Abstract:We report a novel method for direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment, which requires only a low annealing temperature of 320°C. Scanning acoustic microscope (SAM) measurements show that the proposed treatment helps form a firm bond between the wafer pair. The bonding strength is measured with a destructive approach, and the bonding interface is evaluated by scanning electron microscope (SEM).
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