Abstract:This work investigates the optical and interfacial properties of epitaxially fused direct GaInP/Si heterojunctions realized by the corrugated epitaxial lateral overgrowth (CELOG) approach. To provide a broad analysis of the above heterojunction, photoluminescence (PL), cathodoluminescence (CL), Raman, and high-resolution transmission electron microscopy (TEM) were employed in this study. The enhanced luminescence intensity was observed in the direct GaInP/Si heterojunction in the cross-sectional CL because of the reduced defect density in the CELOG GaInP. The spatial resolution dependent PL and CL spectra of GaInP on Si yielded the composition variation of GaInP arising from the anisotropic growth behavior of CELOG. The Ga composition, x, in GaxIn1−xP/Si at the interface deduced from the lattice constant measured by TEM has a good agreement with the results of PL and CL. Low thermal and lattice mismatch strain in CELOG GaInP on Si were revealed by the Raman spectra. TEM investigation further revealed the atomic structure of some planar defects in CELOG GaInP over Si. It is confirmed that although a thin atomic disorder was observed on the surface of Si substrate, an epitaxially fused GaInP/Si heterojunction with a reduced threading dislocation density of ∼6.4 × 107 cm−2 in comparison to ∼4.8 × 108 cm−2 in the InP seed on Si has been successfully fabricated by the CELOG technique despite about 4% lattice mismatch between GaInP and Si. The findings of this study demonstrate the great potential of the CELOG technique for promoting monolithic integration of III-V/Si-based optoelectronics.

Study on Infrared Absorption of Interfaces in Direct Wafer Bonded InP-GaAs Structures

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Interface Layers in In0.532ga0.468as/Inp Superlattices

Optical Properties of Direct Wafer Bonded Micro-Cavity Structures

Characteristics of Direct Wafer Bonded InP Materials

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

Fabrication and Characterization of InP/air-gap Structure

Optical Properties of p-Type GaAs in Far-Infrared Region

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Formation Of Interfaces Between In And Au And Gaas(100) Studied With Soft-X-Ray Photoemission Spectroscopy

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Microstructural characterization of InP films on SOI (001) substrates grown by selective lateral metal-Organic vapor-Phase epitaxy

Research Toward Wafer-Scale 3D Integration of InP Membrane Photonics With InP Electronics

Modulated Photoluminescence Mapping of Long-Wavelength Infrared / Type-II Superlattice: In-Plane Optoelectronic Uniformity

Low Temperature Direct InP/SOI Wafer Bonding Based on Hydrophilic/hydrophobic Treatment

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Direct Observation of Contact Potential Distributions of Wafer-Bonded P-Gaas/n-gan and P-Gaas/n-si by Scanning Kelvin Probe Force Microscopy

Optical and Interfacial Properties of Epitaxially Fused GaInP/Si Heterojunction

Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates