FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GAAS
Chen Zhong-hui,Liu Pu-lin,Zhou Tao,Shi Guo-liang,Lu Wei,Huang Xing-liang,Shen Xue-chu,陈忠辉,刘普霖,周涛,史国良,陆卫,黄醒良,沈学础,ZH CHEN,PL LIU,T ZHOU,GL SHI,W LU,XL HUANG,XC SHEN
DOI: https://doi.org/10.1088/1004-423X/3/6/008
1994-01-01
Abstract:We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2 K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.