Abstract:We conduct a comprehensive theoretical analysis of wurtzite GaxIn1-xN ternary alloys, focusing on their structural, electronic, elastic, piezoelectric, and dielectric properties through rigorous first-principles calculations. Our investigation systematically explores the influence of varying Ga composition (x = 0%, 25%, 50%, 75%, 100%) on the alloy properties. Remarkably, we observe a distinctive non-linear correlation between the band gap and Ga concentration, attributable to unique slopes in the absolute positions of the valence band maximum and conduction band minimum with respect to Ga concentration. Our effective band structure analysis reveals the meticulous preservation of Bloch characters near band extrema, minimizing charge carrier scattering. Furthermore, we scrutinize deviations from linear Vegard-like dependence in elastic, piezoelectric, and dielectric constants. Additionally, our calculations encompass various optical properties, including absorption coefficient, reflectivity, refractive index, energy loss function, and extinction coefficient. We analyze their trends with photon energy, providing valuable insights into the optical behavior of GaxIn1-xN alloys. Our results, in excellent agreement with available experimental data, significantly contribute to a deeper understanding of the alloys' electronic properties. This study offers valuable insights that may illuminate potential applications of GaxIn1-xN alloys in diverse technological fields.

Infrared Spectrum of GaN1-xPx Ternary Alloy

Infrared studies of GaN1-xPx ternary alloys

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Optical and Structural Properties of GaN1-xPx Ternary Alloys

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

Optical Properties of p-Type GaAs in Far-Infrared Region

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Structural Properties of Gan1-Xpx Films

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Miscibility calculation of GaN1-xPx ternary alloys