Abstract:The alloy AlxGa1−xN was grown by metal-organic chemical vapor deposition (MOCVD) using a high-temperature AlN interlayer on a thick GaN template. The Al composition (x) of the AlxGa1−xN was varied in the range 0.13⩽x⩽0.8. The in-situ reflectance spectra indicate that the growth process of AlGaN alloys is dominated by trimethylgallium (TMGa) molar flux when the molar flux of trimethylaluminium (TMAl) is kept constant. The Al compositions and growth rates of AlGaN alloys were determined by Rutherford backscattering, which indicates that the incorporation efficiency of TMAl is improved remarkably by decreasing the TMGa molar flux. The crystalline quality of these AlGaN alloys is evaluated by measuring the symmetric (002) and asymmetric (102) ω-scan X-ray diffraction peak widths. The best crystalline quality, among these AlxGa1−xN alloys, is for an Al composition of x=0.54 where the full-width at half-maximums of the AlGaN (002) and (102) diffraction peaks are 265 and 797arcsec, respectively. This conclusion is consistent with the surface morphology of the AlGaN alloys probed by atomic force microscopy. Room temperature cathodoluminescence spectra show pronounced near band edge emission from these AlGaN alloys. The optical band gaps (Eg) are found to deviate from linear interpolation between EgGaN and EgAlN with a bowing parameter b=0.89.

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Optical and Structural Properties of GaN1-xPx Ternary Alloys

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Structural Properties of Gan1-Xpx Films

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Infrared Spectrum of GaN1-xPx Ternary Alloy

Infrared studies of GaN1-xPx ternary alloys

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

The Solubility of Phosphorus in GaN

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

Optical property studies of GaN films grown by MOCVD