Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Optical Study of Electronic States in Gaasn

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

Unusual Carrier Thermalization in a Dilute Ga As 1 − X N X Alloy

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Probing alloy formation using different excitonic species: The particular case of InGaN

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Optical Properties and Exciton Localization in Ganas/Gaas

Optical Investigation Of Strong Exciton Localization In High Al Composition Alxga1-Xn Alloys

Optical Transitions In Ganas/Gaas Single Quantum Well

Exciton localization and dynamics in GaNAsP nanowires

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition