Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Deep-level structure of the spin-active recombination center in dilute nitrides

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Optical Study of Electronic States in Gaasn

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Probing alloy formation using different excitonic species: The particular case of InGaN

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Effect of Low Nitrogen Concentrations on the Electronic Properties of Inas1-Xnx

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination