Abstract:Effects of rapid thermal annealing (RTA) on the structural properties were investigated in undoped GaN film grown by rf-plasma-assisted molecular beam epitaxy (MBE). Detailed characterizations of the photoluminescence (PL), high-resolution X-ray diffraction and low-frequency noise were conducted on both the as-grown and annealed films. PL and X-ray diffraction measurements showed that the crystallinity of the films improved with RTA at 800 degreesC with significant reduction in the yellow emission. Annealing at 900 degreesC and 1000 degreesC resulted in an increase in the FWHM of the Ti-ray diffraction, indicative of thermal decomposition of the materials. The results are in excellent agreement with our study of low-frequency noise, which demonstrates similar trend in the magnitudes of the Hooge parameters as a function of the annealing temperature, The temperature dependence of the voltage noise power spectra S-nu(f) was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, At the low-frequency range the fluctuation is dominated by 1/f(gamma) noise, and for f > 1 kHz the noise is dominated by G-R noise processes. Our experimental results show that 800 degreesC is the optimal temperature for RTA, which results in substantial improvements in both the optical, structural and noise properties for the material, whereas annealing at 1000 degreesC is found to result in significant material degradation.

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Strain Enhancement During Annealing of Gaasn Alloys

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Effect of Annealing Atmosphere on Physical Characteristics and Photoluminescence Properties of Nitrogen-Implanted ZnO Thin Films

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

Rapid Thermal Annealing Effect on Gaasbi/Gaas Single Quantum Wells Grown by Molecular Beam Epitaxy

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Onset of tetrahedral interstitial formation in GaAsN alloys

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

Effect of Annealing on Photoluminescence Properties of Neon Implanted GaN

Si Implantation in GaN at Elevated Temperatures

Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained Inganas