Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained Inganas

A model for thermal annealing on forming In—N clusters in InGaNP

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Influence of Thermal Annealing on Properties of InGaN Films

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

The Parameters in the Band-Anticrossing Model for in X Ga1−x N Y P1−y Before and after Annealing

Characteristics of Annealing of InN Films

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Structural Characterization of Indium-Rich Nanoprecipitate in InGaN V-pits Formed by Annealing

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

SPANISH 1992 (S92): corpus-based analysis of present-day Spanish for medical purposes

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan