Abstract:InGaN alloys have gained considerable interest over the past due to their tunable band gap extending the operation wavelengths of optoelectronic devices to green–red and IR regions. However, the realization of high In-content InGaN materials is still limited by their material properties. Despite encouraging achievements in InGaN based devices, it is difficult to achieve high quality InGaN with high indium composition. Up to now, there are only few reports about high indium content InGaN films, in particular with indium content > 50%. Successfully grown In-rich InGaN layers with 300 nm thickness and nominally [In] = 70% deposited on GaN template by MBE were comprehensively investigated by highly spatially-resolved cathodoluminescence. The surface morphology has been investigated by atomic force microscope (AFM) and scanning electron microscopy (SEM) and shows grain-like features. The lateral as well as the vertical luminescence distribution yields a detailed insight in the [In] homogeneity. The thick InGaN films, free of droplets, have a quite homogenous emission at 1.035 eV (~1200 nm) laterally with full-width at half maximum of only 68 meV. Determined from the emission peak, the indium composition is about 75%, which is slightly higher than the nominally intended indium composition. The evolution in growth direction will be presented.

Structural Characterization of Indium-Rich Nanoprecipitate in InGaN V-pits Formed by Annealing

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Characteristics of Annealing of InN Films

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing

Influence of Thermal Annealing on Properties of InGaN Films

Thermal Annealing of InN Films Grown by Metal–organic Chemical Vapor Deposition

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template.

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Mechanical Properties of GaN Single Crystals Upon C Ion Irradiation: Nanoindentation Analysis

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Growth and Characterization of Self-Assembled Low-Indium Composition Ingan Nanodots by Alternate Admittance of Precursors

Formation and Dissolution of Microcrystalline Graphite in Carbon-Implanted Gan

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Investigation of InGaN Layer Grown under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

The synthesis and formation mechanism of nonpolar InN nanoplates

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy