Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Electronic Structure of Gainn Semiconductors Investigated by X-Ray Absorption Spectroscopy

A Study of Al1−xInxN Growth by Reflection High-Energy Electron Diffraction—incorporation of Cation Atoms During Molecular-Beam Epitaxy

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Study Of Ultraviolet Emission Enhancement In Alxinyga1-X-Yn Quaternary Alloy Film

Investigation of Indium Surface Segregation in InxGa1-xN Films

Anomalous Indium Incorporation and Optical Properties of High Indium Content InGaN Grown by MOCVD

Effects of indium composition x and temperature on the raman phonon properties of InxGa1-x N alloys with high Indium composition

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Indium Compositional Homogeneity in In$_{0.17}$Al$_{0.83}$N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Lattice Damage and Compositional Changes in Xe Ion Irradiated InxGa1-xN (x = 0.32−1.0) Single Crystals

Raman Study of InxGa1−xN (x = 0.32–0.9) Films Irradiated with Xe Ions at Room Temperature and 773 K