Transition Energies and Bowing Parameters for In-rich InGaN and InAlN Alloys

R. Goldhahn,P. Schley,A. T. Winzer,Munise Cobet,Christoph Cobet,N. Esser,Hai Lu,W. J. Schaff

2006-01-01

Abstract:Growth and characterization of In-rich InGaN alloys has attracted much interest recently. It arises from the band gap correction for InN from the long time accepted value of 1.9 eV down to only about 0.7 eV. Due to the reduced band gap a renewed evaluation of many material parameters of InN and their compositional dependence for (In,Ga)N and (In,Al)N alloys is mandatory. For this aim, determination of the dielectric function (DF) by spectroscopic ellipsometry (SE) has become one of the most powerful methods for studying absorption related properties of In-compounds both around the band gap as well as in the range of the high-energy critical points (CP) of the band structure [1-3]. For example, the experimentally determined shape of the DF and the optical anisotropy of InN [1] has been theoretically reproduced recently [4]. Here, we report ordinary DF’s up to 9.5 eV for In-rich InGaN and InAlN alloys and their analysis, i.e. transition energies for the CP’s and their compositional dependences (bowing parameter). The latter data were determined by fitting the third derivatives of the DF. The DF’s of three InxGa1-xN films (x=0.67, x=0.69, x=0.77) with ~300 nm thickness and three InxAl1-xN films (x=0.91, x=0.83, x=0.71) with ~400 nm thickness were determined. Samples were grown on (0001) sapphire by plasma-induced molecular beam epitaxy (MBE) using either GaN or AlN buffer layer. Further growth details as well as results of the structural, electrical and optical characterisation has been published elsewhere [2,5].