Abstract:Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were calculated. We have performed accurate {\it ab initio} total energy calculations using the full--potential linearized augmented plane wave (FP--LAPW) method to investigate the structural and electronic properties. In both alloys we found that the fundamental parameters do not follow Vegard's law. The lattice parameters, $a, c,$ and $u$, for the Al$_x$Ga$_{1-x}$N alloy are found to exhibit downward bowing, while for In$_x$Ga$_{1-x}$N there is an upward bowing for the $a$ and $c$ parameters and a downward bowing for the internal parameter, $u$. Furthermore, we found that for both alloys, the band gap value does not follow Vegard's law. As a by--product of our electronic band structure calculations, the effective masses of the binary compounds as well as their related alloys were calculated. We show that the calculated properties for the binary compounds, as well as for the studied alloys, show good agreement with most of the previously reported results. Finally, using the frozen phonon approach, the A$_1(TO)$ mode for the different systems studied in this work was calculated. Our calculations show good agreement with experimental values reported for the binary compounds. For the ternary alloys, our calculations reproduce experimental values for Al$_x$Ga$_{1-x}$N as well as theoretical predictions for In$_x$Ga$_{1-x}$N.

Universal bandgap bowing in group-III nitride alloys

Narrow bandgap group III-nitride alloys

Small Band Gap Bowing In In1-Xgaxn Alloys

Band gap bowing for high In content InAlN films

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Temperature-Controlled Epitaxy of Inxga1-Xn Alloys and Their Band Gap Bowing

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

Unusual Properties of the Fundamental Band Gap of InN

Transition Energies and Bowing Parameters for In-rich InGaN and InAlN Alloys

Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors

Hydrostatic Pressure Dependence of the Fundamental Bandgap of Inn and In-Rich Group Iii Nitride Alloys

Alloy Composition Fluctuation And Band Edge Energy Structure Of In-Rich Inxga1-Xn Layers Investigated By Systematic Spectroscopy

Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content

Anomalous band-gap bowing of AlN(1-x)Px alloy

Phase transition and bandgap engineering in B1-Al N alloys: DFT calculations and experiments

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Band structure parameters of the nitrides: The origin of the small band gap of InN

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Temperature Dependence Of The Fundamental Band Gap Of Inn

Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

Influence of the Electronic States Anisotropy on the Band Gap Pressure Coefficient of InxGa1−xN Alloys