Abstract:Using the example of III-V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of the special properties of nitride compounds, their alloys, and quantum structures. The bandgap pressure coefficient is one of the most important parameters in semiconductor physics. Trends in its behavior in nitride structures, together with trends in pressure-induced phase transitions, are discussed in the context of the behavior of other typical semiconductors. Using InN as an example, the pressure-dependent effects typical of very narrow bandgap materials, such as conduction band filling or effective mass behavior, are described. Interesting aspects of bandgap bowing in In-containing nitride alloys, including pressure and clustering effects, are discussed. Hydrostatic pressure also plays an important role in the study of native defects and impurities, as illustrated by the example of nitride compounds and their quantum structures. Experiments and theoretical studies on this topic are reviewed. Special attention is given to hydrostatic pressure and strain effects in short periods of nitride superlattices. The explanation of the discrepancies between theory and experiment in optical emission and its pressure dependence from InN/GaN superlattices led to the well-documented conclusion that InN growth on the GaN substrate is not possible. The built-in electric field present in InGaN/GaN and AlGaN/GaN heterostructures crystallizing in a wurtzite lattice can reach several MV/cm, leading to drastic changes in the physical properties of these structures and related devices. It is shown how hydrostatic pressure modifies these effects and helps to understand their origin.

Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

Effects of Hydrostatic Pressure on Optical Properties of InN and In‐rich Group III‐nitride Alloys

Hydrostatic Pressure Dependence of the Fundamental Bandgap of Inn and In-Rich Group Iii Nitride Alloys

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Pressure-induced Structural Transition of CdxZn 1 − Xo Alloys

Photoluminescence and Pressure Effects in Short Period Inn/Ngan Superlattices

First-Principle Calculations of Elastic Properties of Wurtzite-Type Aluminum Nitride under Pressure

Hydrostatic Pressure Effect On Photoluminescence From A Gan0.015as0.985/Gaas Quantum Well

Special role of indium nitride in the properties of related compounds and quantum structures

InN/GaN Superlattices: Band Structures and Their Pressure Dependence

Pressure Behavior of Deep Centers in Znsxte1-X Alloys

Photoluminescence of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3 under pressure

Narrow bandgap group III-nitride alloys

Short Period Inn/Ngan Superlattices. Experiment Versus Theory

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides

Group III-nitride Alloys As Photovoltaic Materials

Universal bandgap bowing in group-III nitride alloys

Influence of the Electronic States Anisotropy on the Band Gap Pressure Coefficient of InxGa1−xN Alloys