Short Period Inn/Ngan Superlattices. Experiment Versus Theory

Tadek Suski,Iza Gorczyca,Grzegorz Staszczak,Xinqiang Wang,Niels E. Christensen,Axel Svane,Emmanouil Dimakis,Theodore D. Moustakas
DOI: https://doi.org/10.1117/12.2004313
2013-01-01
Abstract:Measurements of photoluminescence and its dependence on hydrostatic pressure are performed on a set of InN/nGaN superlattices with one InN monolayer, and with different numbers of GaN monolayers (n from 1 to 40). The emission energies, E-PL, measured at ambient pressure, are close to the value of the band gap, E-g, in bulk GaN, in agreement with other experimental findings. The pressure dependence of the emission energies, dE(PL)/dp, however, resembles that of the InN energy gap. Further, the magnitudes of both E-PL and dE(PL)/dp are significantly higher than those obtained from ab-nitio calculations for 1InN/nGaN superlattices. Some causes of these discrepancies are suggested. Detailed analysis of the electronic band structure of 1InN/5GaN superlattice is performed showing that the built-in electric field plays an important role in the mInN/nGaN structures. It strongly influences the valence-and conduction-band profiles and thus determines the effective band gap.
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