Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Manifestation of the equilibrium hole distribution in photoluminescence of n-InN

Photoluminescence of N‐inn with Low Electron Concentrations

Acceptor States in the Photoluminescence Spectra of N-Inn

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Study on the Photoluminescence Properties of Inn Films

Carrier Recombination Processes in In-polar N-Inn in Regions of Low Residual Electron Density

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Direct observation of Levy flight of holes in bulk n-InP

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

Short Period Inn/Ngan Superlattices. Experiment Versus Theory

Electron Concentration Dependence of Exciton Localization and Freeze-out at Local Potential Fluctuations in InN Films

Photoluminescence and Absorption in InGaN Films with InN Segregation

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure

Unusual Properties of the Fundamental Band Gap of InN

Photoluminescence and Pressure Effects in Short Period Inn/Ngan Superlattices

The Influence of Conduction Band Plasmons on Core-Level Photoemission Spectra of Inn

Temperature-Dependent Optical Properties of Wurtzite Inn

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Temperature Dependence Of The Fundamental Band Gap Of Inn