Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Photoluminescence of N‐inn with Low Electron Concentrations

Manifestation of the equilibrium hole distribution in photoluminescence of n-InN

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Photoluminescence of Si-Rich Silicon Nitride: Defect-Related States and Silicon Nanoclusters

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Acceptor States in the Photoluminescence Spectra of N-Inn

Temperature-Dependent Optical Properties of Wurtzite Inn

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

The Defect Nature Of Photoluminescence From A Porous Silicon Nanowire Array

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Photoluminescence and Absorption in InGaN Films with InN Segregation

Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

A New Luminescent Defect State in Low Temperature Grown Amorphous SiNxOy Thin Films

Surface optical phonon replica in photoluminescence spectroscopy of nitride nanostructures: Crystal structure and surface effects

Growth And Morphology Of 0.80 Ev Photoemitting Indium Nitride Nanowires