Abstract:Materials solutions are required to enhance radiative recombination in the 520 nm to 620 nm wavelength region, termed the 'green gap', where III-N emitters are inefficient and phosphide materials cannot emit due to an indirect transition. The II-IV-N 2 family of materials (II = Zn, Mg and IV = Si, Ge, Sn) provides a potential solution; the compounds are structurally analogous to the III-N materials with direct optical band gaps and published models suggest heteroepitaxial integration of ZnGeN 2 into GaN LEDs may significantly improve recombination efficiency. In this work we present GaN/ZnGeN 2 /GaN double heterojunctions grown by molecular beam epitaxy (MBE). The MBE-grown heterogeneous interfaces are coherent as measured by electron microscopy and X-ray diffraction, and they are chemically abrupt as measured by X-ray energy dispersive spectroscopy mapping. Electron microscopy shows threading dislocations nucleated at both interfaces, indicating the need for further improvement of growth methods. In particular, the first 30 nm of GaN grown on ZnGeN 2 is highly defective, likely due to the low growth temperature used to prevent Zn desorption. Photoluminescence spectroscopy shows signals of unintentional Zn and Ge doping in the GaN and a 2.9 eV Zn:GaN defect band (donor-acceptor pair) convolved with a separate defect band of distinct physical origin (free-to-bound) which originates from the ZnGeN 2 layer. We identify GeZn antisite defects or GaGe impurities, as suggested by previously published defect calculations, as the most likely candidates for this luminescence. This work demonstrates coherent interfaces between ZnGeN 2 and GaN, highlighting defects and associated properties of interest with respect to optoelectronic applications.

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Shallow Optically Active Structural Defect in Wurtzite GaN Epilayers Grown on Stepped 4H-Sic Substrates

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Study of Gan Thin Films Grown on Vicinal Sic (0001) Substrates by Molecular Beam Epitaxy

Defects in IIINitrides Epilayers

Luminescence associated with stacking faults in GaN

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Impurity Effects on Photoluminescence in Lateral Epitaxially Overgrown Gan

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence

Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions