Abstract:The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Optical Transitions in Cubic Gan Grown by Metalorganic Chemical Vapor Deposition on Gaas (100) Substrate

Shallow Optically Active Structural Defect in Wurtzite GaN Epilayers Grown on Stepped 4H-Sic Substrates

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Donor and Acceptor Characteristics of Native Point Defects in GaN

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Steady and Transient Optical Properties of Cubic Ingan Epilayers

Defects in IIINitrides Epilayers

Cathodoluminescence study of GaN-based film structures

Defect Reduction in Gan Epilayers Grown by Metal-Organic Chemical Vapor Deposition with in Situ Sinx Nanonetwork

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Ge Related Defect Energy And Microcavity Effect In Gan Epitaxial Layer