Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN
Mario Fabian Zscherp,Silas Aurel Jentsch,Marius Johannes Müller,Vitalii Lider,Celina Becker,Limei Chen,Mario Littmann,Falco Meier,Andreas Beyer,Detlev Michael Hofmann,Donat Josef As,Peter Jens Klar,Kerstin Volz,Sangam Chatterjee,Jörg Schörmann
DOI: https://doi.org/10.1021/acsami.3c06319
2023-08-23
Abstract:The lack of internal polarization fields in cubic group-III nitrides makes them promising arsenic-free contenders for next-generation high-performance electronic and optoelectronic applications. In particular, cubic InxGa1-xN semiconductor alloys promise band gap tuning across and beyond the visible spectrum, from the near-ultraviolet to the near-infrared. However, realization across the complete composition range has been deemed impossible due to a miscibility gap corresponding to the amber spectral range. In this study, we use plasma-assisted molecular beam epitaxy (PAMBE) to fabricate cubic InxGa1-xN films on c-GaN/AlN/3C-SiC/Si template substrates that overcome this challenge by careful adjustment of the growth conditions, conclusively closing the miscibility gap. X-ray diffraction reveals the composition, phase purity, and strain properties of the InxGa1-xN films. Scanning transmission electron microscopy reveals a CuPt-type ordering on the atomistic scale in highly alloyed films with x(In) ≈ 0.5. Layers with much lower and much higher indium content exhibit statistical distributions of the cations Ga and In. Notably, this CuPt-type ordering results in a spectrally narrower emission compared to that of statistically disordered zincblende materials. The emission energies of the films range from 3.24 to 0.69 eV and feature a quadratic bowing parameter of b = 2.4 eV. In contrast, the LO-like phonon modes that are observed by Raman spectroscopy exhibit a one-mode behavior and shift linearly from c-GaN to c-InN.