Abstract:Cathodoluminescence (CL) and time-resolved photoluminescence (TRPL) spectroscopy were used to investigate the relation between the surface morphology and emission efficiency in 10× InGaN(3nm)∕GaN(4nm) quantum wells (QWs) deposited by plasma-assisted molecular beam epitaxy (MBE). For this study, two QWs with peak emission around 405nm but grown on different surface morphologies have been investigated. A strong increase in the emission efficiency was observed in the QWs grown on {10-1m} faceted surface GaN template (m>2) as compared to those grown on an atomically smooth template. CL mapping and temperature-dependent PL studies revealed that the QWs grown on the faceted surface GaN epilayer exhibit much stronger in-plane indium content fluctuations and larger width PL peak in the temperature range of 8–300K. We found that the use of {10-1m} faceted surface GaN template resulted in strong potential profile fluctuations (PPFs) inducing different localization centers at different energy levels. We found that the deeper the corresponding fluctuation of the energy level, the weaker the decrease of the PL intensity with increasing temperature, the higher the PL decay time (τPL) in the whole temperature range and the slower the collapse of τPL. Our results demonstrate that the use of {10-1m} faceted surface morphology GaN template is an amplifying process of the PPFs which favors a regime dominated by the recombination of localized carriers.

Surface Emission Of Inxga1-Xn Epilayers Under Strong Optical Excitation

Optical Properties and Exciton Localization in Ganas/Gaas

Exciton Emission of Quasi-2D InGaN in GaN Matrix Grown by Molecular Beam Epitaxy

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Characterization of GaInN/GaN layers for green emitting laser diodes

Excitation Mechanisms of Er Optical Centers in GaN Epilayers

Investigation Of Surface-Plasmon Coupled Red Light Emitting Ingan/Gan Multi-Quantum Well With Ag Nanostructures Coated On Gan Surface

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Steady and Transient Optical Properties of Cubic Ingan Epilayers

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Effect of the Band Structure of InGaN/GaN Quantum Well on the Surface Plasmon Enhanced Light-Emitting Diodes

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

The Optimization of Surface Plasmon Coupling Efficiency in InGaN/GaN Nanowire Based Nanolasers

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Optical Properties of Ultra-Thin Inn Layer Embedded in Ingan Matrix for Light Emitters

Optical Transitions In Ganas/Gaas Single Quantum Well

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures