Abstract:InGaN semiconductor materials are widely used In a new generation of optoelectronic devices because of their adjustable bandgap width by changing In components. However,the green LED still has a "green gap" problem to be solved. In this paper, the carrier recombination mechanism is studied in depth to provide a new idea for solving a "green gap". The photoluminescence spectrum (PL) and time-resolved photoluminescence spectrum (TRPL) were used for investigating the carrier recombination processes of InGaN quantum dots (QDs) LED devices with different photon energies at temperatures. The transient photoluminescence properties of InGaN QDs and the transient life of radiative/nonradiative recombination were obtained. In the temperature range from 15 to 300 K, the peak value of the steady-state photoluminescence spectrum has its first blue shift and then red shift (s-shaped). The blue shift of the emission peak is about 4.2 meV, reaching its maximum value at 60 K, followed by the red shift of the emission peak, forming an s-shaped change with temperature. This change indicates that carrier localization behavior in QDs structure, and exciton recombination is the main reason for green light emission of InGaN QDs. By fitting the normalized PL integral intensity at different temperatures, the activation energy E-act was about 204.07 meV, with high activation energy, which proved that the InGaN QDs have strong carrier limiting effect and can better suppress the transitions to the nonradiative recombination centers. The internal quantum efficiency was estimated at 35.1%. Free carrier in the InGaN QDs composite average composite life tau(rad) = 73.85 ns. The energy boundary value E-me = 2.34 eV is much higher than the local depth E-0 = 62.55 meV, and it can be seen that the energy level is completely lower than the mobility edge, so the decay of InGaN QDs life is attributed to carrier local state recombination. In this study, the improved spectral data analysis method was used to study the fluorescence device based on the new structure of embedded QDs, and meaningful conclusions were obtained. It provides a reference for further understanding of the internal luminescence mechanism of InGaN quantum dots and the development of a new generation of lighting devices, indicating that the introduction of InGaN quantum dots plays a good role in promoting the development of photoelectric devices.

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

Enhanced Localisation Effect and Reduced Quantum-Confined Stark Effect of Carriers in InGaN/GaN Multiple Quantum Wells Embedded in Nanopillars

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Influence of localized surface plasmons on carrier dynamics in InGaN/GaN quantum wells covered with Ag nanoparticles for enhanced photoluminescence

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Enhancement of Carrier Localization Effect and Internal Quantum Efficiency Through In-rich InGaN Quantum Dots

Strong Localization Effect and Carrier Relaxation Dynamics in Self-Assembled InGaN Quantum Dots Emitting in the Green

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Fabrication and Improvement of Nanopillar InGaN / GaN Light-Emitting Diodes Using Nanosphere Lithography

Optical And Local Current Studies On Inas/Gaas Quantum Dots

GaN Surface As the Source of Non-Radiative Defects in InGaN/GaN Quantum Wells

Surface Morphology and Optical Properties of InGaN Quantum Dots with Varying Growth Interruption Time

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.