Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

Christina Jones,Chu-Hsiang Teng,Qimin Yan,Pei-Cheng Ku,Emmanouil Kioupakis

DOI: https://doi.org/10.1063/1.5002104

2017-09-14

Abstract:We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Hence, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Furthermore, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN LEDs.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problem of the influence of carrier localization in indium gallium nitride (InGaN) quantum wells on the radiative recombination and Auger recombination rates. Specifically, the author explores how carrier localization caused by random alloy fluctuations affects the radiative recombination and Auger recombination rates in InGaN quantum wells, and further studies how these effects influence the efficiency of nitride light - emitting diodes (LEDs).

### Main problems:
1. **Influence of carrier localization**: Carrier localization is caused by the random distribution of indium and gallium atoms in the InGaN alloy. This localization will affect the behavior of carriers in the quantum well, and further affect the radiative recombination and Auger recombination rates.
2. **Changes in radiative recombination and Auger recombination rates**: Through theoretical calculations and numerical simulations, the author studies the specific influence of carrier localization on these two recombination rates under different conditions (such as alloy composition, crystal orientation, carrier density and temperature).
3. **Efficiency degradation problem**: In particular, the author focuses on how carrier localization exacerbates the efficiency droop and the green - gap problem in InGaN LEDs. These two problems are the main reasons for the efficiency reduction of InGaN LEDs at high power and long wavelengths (such as green).

### Research methods:
- **Schrödinger - Poisson simulation**: Use the Schrödinger - Poisson equation under the effective mass approximation to simulate the carrier wave function and energy.
- **Comparing virtual crystals with actual alloys**: Compare the actual InGaN quantum wells with alloy composition fluctuations with the virtual crystal model to evaluate the influence of localization on the recombination rate.
- **Weighted average overlap integral**: Quantify the influence of localization on the recombination rate by calculating the weighted average overlap integral of electron and hole wave functions.

### Main findings:
- **Localization increases recombination rates**: Carrier localization increases the radiative recombination and Auger recombination rates, but the increase in the Auger recombination rate is more significant (by about an order of magnitude) than that of the radiative recombination rate.
- **Exacerbates efficiency degradation**: Localization exacerbates the efficiency droop and the green - gap problem in InGaN LEDs, especially under high - carrier - density and high - temperature conditions.
- **Influence of different orientations**: For polar and non - polar oriented quantum wells, the influence of localization on the recombination rate is different, and the Auger recombination rate of polar quantum wells is higher.

In conclusion, through detailed theoretical analysis and numerical simulation, this paper reveals the complex influence of carrier localization on the recombination process in InGaN quantum wells and provides new insights into understanding the efficiency problems of InGaN LEDs.