Abstract:The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.

What problem does this paper attempt to address?

This paper aims to solve the efficiency droop problem in AlGaN deep - ultraviolet light - emitting diodes (LEDs). Specifically, the paper explores the Auger - Meitner recombination (AMR) aggravated by carrier confinement and alloy disorder, which is the main cause of the decrease in internal quantum efficiency (IQE) of AlGaN UV LEDs at high driving currents. Through first - principles density - functional theory (DFT) calculations, the authors show how electron - phonon coupling and alloy disorder affect the AMR rate, and find that the polarization field within the quantum well severely relaxes crystal momentum conservation, thereby significantly increasing the AMR rate relative to radiative recombination. This leads to a sharp drop in quantum efficiency at high power. The paper also proposes that suppressing the polarization field and increasing the quantum well width can greatly reduce AMR and efficiency droop. ### Main problems - **Efficiency Droop**: The IQE of AlGaN UV LEDs decreases at high driving currents, mainly caused by AMR. - **AMR mechanism**: The paper studies the mechanism of AMR in detail, especially the influence of indirect AMR (mediated by electron - phonon coupling and alloy disorder) on the AMR coefficient. - **Quantum well effect**: How carrier confinement and polarization fields within the quantum well exacerbate AMR, leading to a significant decrease in IQE. ### Solutions - **Suppress polarization field**: Suppress the polarization field by growing devices on non - polar planes or doping the barrier layer. - **Increase quantum well width**: Increase the quantum well width to reduce carrier confinement, thereby reducing AMR and efficiency droop. - **Use atomic - level superlattices**: Use atomically thin AlN and GaN superlattice structures without alloy disorder to further reduce the AMR rate. ### Paper contributions - **Theoretical calculations**: Through DFT calculations, the composition - dependence of the AMR coefficient and the quantum well effect are revealed. - **Experimental verification**: Provide experimental data support to verify the results of theoretical calculations. - **Design suggestions**: Propose specific quantum well design improvement measures to overcome AMR limitations and improve the efficiency of AlGaN UV LEDs. ### Formulas - **IQE definition**: \[ \text{IQE}=\frac{Bn^{2}}{An + Bn^{2}+Cn^{3}} \] where $n$ is the carrier density, and $An$, $Bn^{2}$ and $Cn^{3}$ are the Shockley - Read - Hall recombination, radiative recombination and Auger - Meitner recombination terms respectively. - **AMR coefficients**: - AMR coefficient for the hole - hole - electron (hhe) process: $C_{\text{hhe}}$ - AMR coefficient for the electron - electron - hole (eeh) process: $C_{\text{eeh}}$ Through these studies, the paper provides an important theoretical basis and design guidance for improving the performance of AlGaN UV LEDs.

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