Abstract:The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Donor and Acceptor Characteristics of Native Point Defects in GaN

Rare-earth defects in GaN: A systematic investigation of the lanthanide series

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

First-principles study on the electronic structures of Gd pnictides

First-Principles Exploration of Defect-Pairs in GaN

Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association

Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Complex defects in Al0.5Ga0.5N by first principles calculations

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Nitrogen vacancy–acceptor complexes in gallium nitride

Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN