Abstract:Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association

Rare-earth defects in GaN: A systematic investigation of the lanthanide series

Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible with CMOS Technology

Enhancing Electronic and Magnetic Properties in Eu‐Doped GaN Nanowires via p‐f Hybridization of Eu‐Defect Complexes

Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN

Photoluminescence and Cathodoluminescence Analyses of Gan Powder Doped with Eu

Luminescence Dynamics and Waveguide Applications of Europium Doped Gallium Nitride Powder

Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method

Luminescence properties of defects in GaN

Hybrid density functional study of optically active Er$^{3+}$ centers in GaN

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

Luminescence Behavior of Eu3+ Doped LaF3 Nanoparticles.

Study of Eu3+-doped Luminescence Glasses Prepared by a Sol-Gel Process

An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

Luminescence Behavior of the Eu(Ttfa)(3) and Tbssa Co-Doped Xerogel

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Rare-earth defects and defect-related luminescence in ZnS

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO