Crude protein extraction protocol for phage N15 protelomerase in vitro enzymatic assays.

Qingwen Chen,K. Narayanan

DOI: https://doi.org/10.1016/j.ab.2011.03.006

IF: 2.9

2011-07-01

Analytical Biochemistry

Abstract:

What problem does this paper attempt to address?

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Peter A Schultz,Jesse James Lutz

DOI: https://doi.org/10.1088/1361-648x/ad7fb1

2024-09-27

Journal of Physics Condensed Matter

Abstract:Using ground state density functional theory (DFT) and implementing an occupation-constrained DFT (occ-DFT) for self-consistent excited state calculations, we decipher the electronic structure of the Mn dopant and other 3d defects in GaN across the band gap. Our analysis, validated with broad agreement with defect levels (ground state calculations) and photoluminescence data (excited state calculations), mandates broad reinterpretation of 3d defect data in GaN. The MnGa defect spans stable charge states from (1-) in n-type GaN through (2+) in p-type GaN. The Mn(2+) is predicted to be a d2 ground state spin triplet defect with a singlet excited state, isoelectronic with the defect associated with the 1.19 eV photoluminescence in n-type GaN. The combined analysis of defect levels and excited states invites reassessment of all d2-capable dopants in GaN. We demonstrate that the 1.19 eV defect, a candidate defect for optically controlled quantum applications, cannot be the Cr(1+) assumed in literature and instead must be the V(0). The combined ground-state/excited-state DFT analysis is shown to be able to chemically fingerprint defects.

physics, condensed matter
Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Olivia Grace Licata,Scott Broderick,Emma Rocco,Fatemeh Shahedipour-Sandvik,Baishakhi Mazumder

DOI: https://doi.org/10.1063/5.0061153

2021-02-15

Abstract:In this work, doping-defect interactions relevant to self-compensation in p-type GaN were investigated using atom probe tomography. The 3D visualization of ion distribution revealed the formation of spherical Mg-rich clusters and the segregation of Mg dopant towards dislocations in MOCVD-grown GaN:Mg. Impurities related to self-compensation, such as oxygen and hydrogen, were identified and detected adjacent to Mg-rich dislocations. Crystal stoichiometry around the defect regions was investigated to understand how the defects can serve as traps and influence dopant diffusion. Non-stoichiometric regions of N:Ga were found adjacent to Mg-rich dislocations and overlapping with some Mg-rich clusters, indicating potential traps. Variations in N:Ga were not proportional to the Mg content, suggesting that the microfeatures (clusters and dislocations) interact differently with local chemistry. Techniques for defining the quality of an APT experiment through invalidation of artifacts are also demonstrated. Mg-rich defects and variations in N:Ga were found to be independent of artifacts related to the evaporation field in APT.

Materials Science
Donor and Acceptor Characteristics of Native Point Defects in GaN

Zijuan Xie,Yu Sui,John Buckeridge,C. Richard A. Catlow,Thomas W. Keal,Paul Sherwood,Aron Walsh,Matthew R. Farrow,David O. Scanlon,Scott M. Woodley,Alexey A. Sokol

DOI: https://doi.org/10.1088/1361-6463/ab2033

2019-05-03

Abstract:The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

Materials Science
Rare-earth defects in GaN: A systematic investigation of the lanthanide series

Khang Hoang

DOI: https://doi.org/10.1103/PhysRevMaterials.6.044601

IF: 3.98

2022-04-16

Physical Review Materials

Abstract:Rare-earth doped GaN is of interest for optoelectronics and spintronics and potentially for quantum applications. A fundamental understanding of the interaction between RE dopants and the semiconductor host is key to realizing the material's full potential. This paper reports an investigation of lanthanide ( Ln ) defects in GaN using hybrid density-functional defect calculations. We find that all the Ln dopants incorporated at the Ga lattice site, LnGa ( Ln = La‚ÄďLu), are stable as trivalent ions, but Eu and Yb can also be stabilized as divalent and Ce, Pr, and Tb as tetravalent. The location of Ln -related defect levels and the Ln 4f states in the energy spectrum of the host material is determined from first principles. We elucidate the interplay between defect formation and electronic structure, including the Ln ‚ÄďN interaction, and the effect of doping on the local lattice environment. Optical properties are investigated by considering possible defect-to-band and band-to-defect transitions involving LnGa defects with in-gap energy levels, including broad charge-transfer transitions. These defects can also act as carrier traps and mediate energy transfer from the host into the 4f -electron core of the Ln ion which leads to sharp intra- f luminescence. https://doi.org/10.1103/PhysRevMaterials.6.044601 ¬©2022 American Physical Society

materials science, multidisciplinary
Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

J Severs,J G Lozano,S Hooper,P D Nellist

DOI: https://doi.org/10.1088/1742-6596/522/1/012038

2014-06-11

Journal of Physics: Conference Series

Abstract:Despite the significant progress in the area, III-nitride LEDs still suffer from reduced efficiency due to a high dislocation density associated with a lack of suitable growth substrates and strong polarisation fields along the c-axis, the predominant growth direction, resulting in the quantum confined stark effect (QCSE). The novel materials studied here have been developed with the aim of reducing both of these effects and consist of a series of GaN and InGaN layers deposited by chemical vapour deposition on the non-polar, m-plane facets of core structures prepared from c-axis GaN thin films. A dual-beam FIB has been used to prepare a and c-plane sections through these novel structures in order to characterise the defects in the core and non-polar junction using, both diffraction contrast and high resolution, TEM and STEM. The dislocations in the c-axis GaN were generally observed to be confined to this region but the non-polar layers had a high density of defects. The latter include unusual flag type defects which are shown to be comprised of pyramidal dislocations and basal-plane stacking faults, with the Burgers vectors determined via g·b analysis.
Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

Kamil Czelej,Mubashir Mansoor,Mehmet Ali Sarsil,Mert Tas,Yahya A. Sorkhe,Mehya Mansoor,Maryam Mansoor,Bora Derin,Onur Ergen,Servet Timur,Mustafa Ürgen,Mustafa Ürgen

DOI: https://doi.org/10.1021/acs.chemmater.4c00178

IF: 10.508

2024-07-16

Chemistry of Materials

Abstract:GaN is a technologically indispensable material for various optoelectronic properties, mainly due to the dopant-induced or native atomic-scale point defects that can create single photon emitters, a range of luminescence bands, and n- or p-type conductivities. Among the various dopants, chromium and manganese-induced defects have been of particular interest over the past few years, because some of them contribute to our present-day light-emitting diode (LED) and spintronic technologies. However,...

materials science, multidisciplinary,chemistry, physical
Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Menglin Huang,He Li,Shiyou Chen

DOI: https://doi.org/10.1002/pssa.202000723

2021-01-01

Abstract:There are dozens of double-site and triple-site dopant-defect complexes in Mg-H-codoped GaN that can compensate the Mg-Ga acceptor and thus limit p-type conductivity; however, their properties have not been systematically studied. Using first-principles calculations, herein, it is found that the well-known double-site complexes Mg-Ga-V-N and Mg-Ga-H-N can still act as donors, although they are already donor-acceptor-compensated complexes. Therefore, they can compensate another Mg-Ga acceptor and form the triple-site complexes Mg-Ga-Mg-Ga-V-N and Mg-Ga-Mg-Ga-H-N, which have never been reported. The formation energies of the two triple-site complexes can be low, especially in Ga-rich and n-type GaN, so they have non-negligible concentration and thus play an important role in limiting the p-type conductivity. The Mg-Ga-Mg-Ga-V-N complex produces a defect level that can not only induce nonradiative electron-hole recombination, but also give rise to a red and broad photoluminescence band at 1.76 eV, providing another explanation for the red band observed in heavily Mg-doped GaN. These triple-site dopant-defect complexes should be taken into account in future study of defects in GaN and related semiconductors.
First-principles study on the electronic structures of Gd pnictides

Xiangming Tao,Mingqiu Tan,Gaoxiang Ye

DOI: https://doi.org/10.7498/aps.49.943

2000-01-01

Abstract:In this article we present a first-principles calculation on the electronic structures and magnetism of Gd pnictides. Calculations are based on the local (spn-) density approximation of the density functional theory (DFT). The calculation method we used in this study is the linear muffin-tin orbitals in the atomic-sphere approximation (LMTO-ASA). Our result shows that in the non-spin polarized case the calculated band structures of Gd-V(V = N,P and As) exhibith characteristics of semimetals. After performing a wide band self-energy corrections, only the band structure of GdN is found to be a semiconductor with a narrow band gap (∼ 0.19 eV). Within the local-spin density approximations, the majority and minor spin bands of GdN display different features, i. e., the spin up band is semimetallic and the spin down band is semconductor-like with a narrow gap (Eg≈0.36 eV). All systems studied except GdN were found to be semimetallic wth a hole section of the Fermi surface near Γ and an electron section near X.
Defects in GaN Films Studied by Positron Annihilation Spectroscopy

XD Pi,PG Coleman,CL Tseng,CP Burrows,B Yavich,WN Wang

DOI: https://doi.org/10.1088/0953-8984/14/12/102

2002-01-01

Journal of Physics Condensed Matter

Abstract:The annealing of n-type thin GaN films grown by metal-organic chemical vapour deposition in vacuum has been studied by beam-based positron annihilation spectroscopy. The results are consistent with a model in which Ga vacancies (V-Ga) exist alongside dislocations and are stable up to 900degreesC. It is suggested that dislocations are shallow positron traps. Upon annealing at,less than or equal to500degreesC the decrease of dislocation density increases the effective positron diffusion length (L+eff) and the probability of trapping at V-Ga. While L+eff continues to change, the trapping of positrons at V-Ga is saturated upon annealing above 500degreesC. The formation of N vacancies near the surface at high temperatures is considered to introduce a potential that retards positron back-diffusion. At 900degreesC dissociation of GaN at a rate of similar to5 nm s(-1) is observed. Oxygen clusters, stable up to 900degreesC, appear to exist near the interface between the GaN film and the sapphire substrate.
Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Q. Wang,Q. Sun,P. Jena

DOI: https://doi.org/10.1103/PhysRevB.75.035322

IF: 3.7

2007-01-01

Physical Review B

Abstract:First principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped Ga1-xMnxN thin films. We show that the ground state of Mn-doped GaN (10 (1) over bar0) thin film, with Mn replacing the Ga sites, is antiferromagnetic but becomes ferromagnetic when it is codoped with C. The interaction between the Mn spins via the delocalized holes introduced by codoping of C at N sites is responsible for this transition. The overlap between Mn 3d and C 2p in the spin-up band renders half-metallic character to the C codoped (Ga,Mn)N system. The observed ferromagnetism in (Ga,Mn)N thin films is believed to be associated with defects or codoping with other elements during the film growth. The present study provides the theoretical understanding for many recent experiments on the Mn-doped GaN system.
Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Xiaorui Wang,Tomas Vanek,Frantisek Hajek,Vitezslav Jary,Tomas Hubacek,Alice Hospodkova,Francis Chi-Chung Ling,Shijie Xu

DOI: https://doi.org/10.1088/1361-6641/ad7638

IF: 2.048

2024-01-01

Semiconductor Science and Technology

Abstract:With the sub-bandgap optical excitation, thermal dynamics of holes among multiple levels in n-type GaN epilayers with different dopants of Si, Ge and C are investigated via measuring and modeling variable-temperature yellow luminescence (YL) band of the samples. In sharp contrast to the case of above-bandgap optical excitation, the variable-temperature YL band of all the studied GaN samples including unintentionally-doped sample exhibit unusual negative thermal quenching (NTQ) behavior, suggesting a possible physical mechanism, namely thermally induced migration of holes from shallower levels to the luminescent deep level. By considering the possible presence of multiple hole levels in the doped GaN samples, a phenomenological model is developed for the thermal transfer of holes among the multi-levels and the interpretation of the observed NTQ phenomenon of the YL band. Different activation energies of 347.9, 520.8 and 348.5 meV are obtained for the Ge-doped, high C-containing, and Si-doped GaN samples, respectively. The results reveal the existence of multiple hole defect levels in the n-type GaN. Possible microstructural origins causing these different hole levels are further argued. The study may shed some light on the nature of various defect complexes in the technologically important GaN epilayers. Combined microstructural and optical investigations need to be further done for elucidating various optically- and electrically-active defect complexes in GaN.
First-Principles Exploration of Defect-Pairs in GaN

He Li,Menglin Huang,Shiyou Chen

DOI: https://doi.org/10.48550/arXiv.2003.05600

2020-03-12

Abstract:Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defect-pairs with short defect-defect distances are found to be stable during structural relaxation, so they can exist in the GaN lattice once formed during the irradiation of high-energy particles. 9 defect-pairs have formation energies lower than 10 eV in the neutral state. The vacancy-pair VN-VN is found to have very low formation energies, as low as 0 eV in p-type and Ga-rich GaN, and act as efficient donors producing two deep donor levels, which can limit the p-type doping and minority carrier lifetime in GaN. VN-VN has been overlooked in the previous study of defects in GaN. Most of these defect-pairs act as donors and produce a large number of defect levels in the band gap. Their formation energies and concentrations are sensitive to the chemical potentials of Ga and N, so their influences on the electrical and optical properties of Ga-rich and N-rich GaN after irradiation should differ significantly. These results about the defect-pairs provide fundamental data for understanding the radiation damage mechanism in GaN and simulating the defect formation and diffusion behavior under irradiation.

Materials Science,Computational Physics
Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association

Khang Hoang

DOI: https://doi.org/10.1103/PhysRevMaterials.5.034601

IF: 3.98

2021-03-05

Physical Review Materials

Abstract:Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid density-functional defect calculations. This includes the interaction between the rare-earth dopant and native point defects (Ga and N vacancies) and other impurities (O, Si, C, H, and Mg) unintentionally present or intentionally incorporated into the host material. While the trivalent Eu3+ ion is often found to be predominant when Eu is incorporated at the Ga site in wurtzite GaN, the divalent Eu2+ is also stable and found to be predominant in a small range of Fermi-level values in the band-gap region. The Eu2+ / Eu3+ ratio can be tuned by tuning the position of the Fermi level and through defect association. We find co-doping with oxygen can facilitate the incorporation of Eu into the lattice. The unassociated EuGa is an electrically and optically active defect center and its behavior is profoundly impacted by local defect-defect interaction. Defect complexes such as EuGa−ON , EuGa−SiGa , EuGa−Hi , EuGa−MgGa , and EuGa−ON−MgGa can efficiently act as deep carrier traps and mediate energy transfer from the host into the Eu3+4f -electron core which then leads to sharp red intra- f luminescence. Eu-related defects can also give rise to defect-to-band luminescence. The unassociated EuGa , for example, is identified as a possible source of the broad blue emission observed in n -type, Eu2+ -containing GaN. This work calls for a re-assessment of certain assumptions regarding specific defect configurations previously made for Eu-doped GaN and further investigation into the origin of the photoluminescence hysteresis observed in (Eu,Mg)-doped samples. https://doi.org/10.1103/PhysRevMaterials.5.034601 ©2021 American Physical Society

materials science, multidisciplinary
Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Koji Shimizu,Ying Dou,Elvis F. Arguelles,Takumi Moriya,Emi Minamitani,Satoshi Watanabe

DOI: https://doi.org/10.48550/arXiv.2203.16789

2022-03-31

Materials Science

Abstract:Investigation of charged defects is necessary to understand the properties of semiconductors. While density functional theory calculations can accurately describe the relevant physical quantities, these calculations increase the computational loads substantially, which often limits the application of this method to large-scale systems. In this study, we propose a new scheme of neural network potential (NNP) to analyze the point defect behavior in multiple charge states. The proposed scheme necessitates only minimal modifications to the conventional scheme. We demonstrated the prediction performance of the proposed NNP using wurzite-GaN with a nitrogen vacancy with charge states of 0, 1+, 2+, and 3+. The proposed scheme accurately trained the total energies and atomic forces for all the charge states. Furthermore, it fairly reproduced the phonon band structures and thermodynamics properties of the defective structures. Based on the results of this study, we expect that the proposed scheme can enable us to study more complicated defective systems and lead to breakthroughs in novel semiconductor applications.
Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Q. Sun,P. Jena

2007-01-01

Abstract:First principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped Ga1−xMnxN thin films. We show that the ground state of Mn-doped GaN 101̄0 thin film, with Mn replacing the Ga sites, is antiferromagnetic but becomes ferromagnetic when it is codoped with C. The interaction between the Mn spins via the delocalized holes introduced by codoping of C at N sites is responsible for this transition. The overlap between Mn 3d and C 2p in the spin-up band renders half-metallic character to the C codoped Ga,Mn N system. The observed ferromagnetism in Ga,Mn N thin films is believed to be associated with defects or codoping with other elements during the film growth. The present study provides the theoretical understanding for many recent experiments on the Mn-doped GaN system.
Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Qian Wang,Qiang Sun,Puru Jena

DOI: https://doi.org/10.1103/physrevb.75.035322

IF: 3.7

2007-01-01

Physical Review B

Abstract:First principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped ${\\mathrm{Ga}}_{1\\ensuremath{-}x}{\\mathrm{Mn}}_{x}\\mathrm{N}$ thin films. We show that the ground state of Mn-doped GaN $(10\\overline{1}0)$ thin film, with Mn replacing the Ga sites, is antiferromagnetic but becomes ferromagnetic when it is codoped with C. The interaction between the Mn spins via the delocalized holes introduced by codoping of C at N sites is responsible for this transition. The overlap between Mn $3d$ and C $2p$ in the spin-up band renders half-metallic character to the C codoped (Ga,Mn)N system. The observed ferromagnetism in (Ga,Mn)N thin films is believed to be associated with defects or codoping with other elements during the film growth. The present study provides the theoretical understanding for many recent experiments on the Mn-doped GaN system.
Complex defects in Al0.5Ga0.5N by first principles calculations

Libin Zhang,Yihong Ye,Jiacheng Zhou,Zhiyin Gan,Longchao Cao,Xiang Li

DOI: https://doi.org/10.1080/00268976.2024.2427239

2024-11-23

Molecular Physics

Abstract:The complex native point defects in Al 0.5 Ga 0.5 N are studied by density functional theory (DFT) and Heyd, Scuseria and Ernzerhof (HSE) hybrid functional. The lower formation energy as well as the donor and acceptor properties of Al 0.5 Ga 0.5 N with different complex native point defects are obtained. It is found that V Ga -Ga N exhibits donor property under p -type conditions while V Al -V N and V Ga - V N exhibit acceptor properties under n -type conditions. Then, the density of states studies indicate that the defect peaks in the Al 0.5 Ga 0.5 N bandgap are all contributed by the defect atoms or atoms near the defects. Moreover, the charge distribution and bonding states analyses show that the Al i atom in V Al - Al i forms ionic bonds with the N atoms in Al 0.5 Ga 0.5 N and the antisite Ga atom in V Ga -Ga N forms ionic bonds with the N atoms in Al 0.5 Ga 0.5 N. Furthermore, the thermodynamic transition energy levels exploration reveals that V Ga -Ga N is most likely to undergo thermodynamic transitions. Meanwhile, the binding energies analyses elucidate that V Ga -Ga N is the most stable in Al 0.5 Ga 0.5 N. The formation mechanism of complex native point defects in Al 0.5 Ga 0.5 N has been revealed, which helps to get a deeper insight to the growth and doping of AlGaN and expands its application in high-power and high-frequency optoelectronic devices.

chemistry, physical,physics, atomic, molecular & chemical
Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Marcin Zajac,Paweł Kaminski,Roman Kozlowski,Elzbieta Litwin-Staszewska,Ryszard Piotrzkowski,Karolina Grabianska,Robert Kucharski,Rafal Jakiela

DOI: https://doi.org/10.3390/ma17051160

IF: 3.4

2024-03-02

Materials

Abstract:The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN crystals grown by the ammonothermal method (SI AT GaN:Mg) was investigated for the first time. The grown-in defects produced by the displacement of nitrogen atoms were experimentally observed as deep traps revealed by the Laplace transform photoinduced transient spectroscopy in the compensated p-type crystals with the Mg concentrations of 6 × 1018 and 2 × 1019 cm−3 and resistivities of ~1011 Ωcm and ~106 Ωcm, respectively. In both kinds of materials, three closely located traps with activation energies of 430, 450, and 460 meV were revealed. The traps, whose concentrations in the stronger-doped material were found to be significantly higher, are assigned to the (3+/+) and (2+/+) transition levels of nitrogen vacancies as well as to the (2+/+) level of nitrogen split interstitials, respectively. In the material with the lower Mg concentration, a middle-gap trap with the activation energy of 1870 meV was found to be predominant. The results are confirmed and quantitatively described by temperature-dependent Hall effect measurements. The mechanism of nitrogen atom displacement due to the local strain field arising in SI AT GaN:Mg is proposed and the effect of the Mg concentration on the charge compensation is discussed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
A combined AIMD and DFT study of the low-energy radiation responses of GaN

Ming Jiang,Nuo Cheng,Xin-Yu Zhu,Xuan-Liang Hu,Zi-Han Wang,Ning Liu,Shuo Song,Sheng-Ze Wang,Xu-Sheng Liu,Chandra Veer Singh

DOI: https://doi.org/10.1039/d4cp00426d

IF: 3.3

2024-05-23

Physical Chemistry Chemical Physics

Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

chemistry, physical,physics, atomic, molecular & chemical
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Audrius Alkauskas,John L. Lyons,Daniel Steiauf,Chris G. Van de Walle

DOI: https://doi.org/10.1103/PhysRevLett.109.267401

2013-03-13

Abstract:We present a theoretical study of broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multi-dimensional vibrational problem can be mapped onto an effective one-dimensional configuration coordinate diagram. Our approach is implemented based on density functional theory with a hybrid functional, resulting in luminescence lineshapes for important defects in GaN and ZnO that show unprecedented agreement with experiment. We find clear trends concerning effective parameters that characterize luminescence bands of donor- and acceptor-type defects, thus facilitating their identification.

Materials Science

Crude protein extraction protocol for phage N15 protelomerase in vitro enzymatic assays.

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Donor and Acceptor Characteristics of Native Point Defects in GaN

Rare-earth defects in GaN: A systematic investigation of the lanthanide series

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

First-principles study on the electronic structures of Gd pnictides

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

First-Principles Exploration of Defect-Pairs in GaN

Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association

Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Complex defects in Al0.5Ga0.5N by first principles calculations

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

A combined AIMD and DFT study of the low-energy radiation responses of GaN

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO