Abstract:The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Nitrogen vacancy–acceptor complexes in gallium nitride

Electronic structures and physical properties of Mg, C, and S doped g-GaN

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Self-compensation due to point defects in Mg-doped GaN

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Study of the heavily p-type doping of cubic GaN with Mg

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Electronic Structures and Optical Properties of GaN Nanotubes with MgGa–ON Co-Doping

Donor and Acceptor Characteristics of Native Point Defects in GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Complex defects in Al0.5Ga0.5N by first principles calculations

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

P-type nitrogen-doped β-Ga 2 O 3 : the role of stable shallow acceptor N O –V Ga complexes

First-Principles Exploration of Defect-Pairs in GaN