Abstract:GaN is known as the third generation of semiconductor and holds promising applications. In this present work, one-dimensional zigzag nanotubes derived from GaN are studied in depth, mainly focusing on their chemical bondings, electronic structures, transport properties, and the regulating effects under gate voltage for nanotubes doped with low-concentration non-metallic atoms in main-groups IIIA-VIIA. Some important findings are obtained, such as the chemical bonds around a heteroatom atom, and their average bond length, binding energy, and chemical formation energy are closely related to the atomic number (the atomic radius), and the charge transfer between heteroatom and nanotubes is directly related to their relative electronegativity. More importantly, we find that although the intrinsic nanotube is a semiconductor, when it is doped with non-metallic atoms, the electronic phase of nanotube possesses an obvious odd-even effect. Namely, after being doped by hetero-atoms in main-groups IIIA, VA, VIIA, nanotubes are semiconductors, but they becomes metals after having been doped with hetero-atoms in main-groups IVA and VIA. This phenomenon has a close relation with the lone-paired electronic state. And also, It is found that with atom doping, the difference between carriers’ mobilities (the hole mobility and electron mobility) of semiconducting tubes can be regulated to reach one order of magnitude, especially the hole mobility and electron mobility can be obviously enhanced by a higher gate voltage. For example, when the gate voltage is increased to 18 V, the hole mobility rises nearly 20 times compared with the case without gate voltage.

Electronic Structures and Optical Properties of GaN Nanotubes with MgGa–ON Co-Doping

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

Band Edge Modulation And Interband Optical Transition In Aln: Mg-Al-O-N Nanotubes

Zn-dopant dependent defect evolution in GaN nanowires

Electronic Structure and Magnetic Properties of Substitutional Transition-Metal Atoms in GaN Nanotubes

First Principal Calculations on the Electronic Structure and the Optical Properties of Al-doped Zigzag GaN Nanotube

Non-metallic Atom Doped GaN Nanotubes: Electronic Structure, Transport Properties, and Gate Voltage Regulating Effects

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Optoelectronic properties exploration of native point defects on GaN nanowires

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Correlation of Doping, Structure, and Carrier Dynamics in a Single GaN Nanorod

Effect of Cu doping on the electronic structure, magnetic and optical properties of GaN/ZnS heterojunctions: a first-principles study

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Electronic structures and transport properties of low-dimensional GaN nanoderivatives: A first-principles study

Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure