Abstract:GaN is known as the third generation of semiconductor and holds promising applications. In this present work, one-dimensional zigzag nanotubes derived from GaN are studied in depth, mainly focusing on their chemical bondings, electronic structures, transport properties, and the regulating effects under gate voltage for nanotubes doped with low-concentration non-metallic atoms in main-groups IIIA-VIIA. Some important findings are obtained, such as the chemical bonds around a heteroatom atom, and their average bond length, binding energy, and chemical formation energy are closely related to the atomic number (the atomic radius), and the charge transfer between heteroatom and nanotubes is directly related to their relative electronegativity. More importantly, we find that although the intrinsic nanotube is a semiconductor, when it is doped with non-metallic atoms, the electronic phase of nanotube possesses an obvious odd-even effect. Namely, after being doped by hetero-atoms in main-groups IIIA, VA, VIIA, nanotubes are semiconductors, but they becomes metals after having been doped with hetero-atoms in main-groups IVA and VIA. This phenomenon has a close relation with the lone-paired electronic state. And also, It is found that with atom doping, the difference between carriers’ mobilities (the hole mobility and electron mobility) of semiconducting tubes can be regulated to reach one order of magnitude, especially the hole mobility and electron mobility can be obviously enhanced by a higher gate voltage. For example, when the gate voltage is increased to 18 V, the hole mobility rises nearly 20 times compared with the case without gate voltage.

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

Electronic Structures and Optical Properties of GaN Nanotubes with MgGa–ON Co-Doping

Electronic Structures of Ingan2 Nanotubes

Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

Electronic Structure and Magnetic Properties of Substitutional Transition-Metal Atoms in GaN Nanotubes

Band Edge Modulation And Interband Optical Transition In Aln: Mg-Al-O-N Nanotubes

Optical Properties of In2 xGa2-2 xO3 Nanowires Revealed by Photoacoustic Spectroscopy

Stability and electronic structure of single-walled InN nanotubes

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

First Principal Calculations on the Electronic Structure and the Optical Properties of Al-doped Zigzag GaN Nanotube

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Non-metallic Atom Doped GaN Nanotubes: Electronic Structure, Transport Properties, and Gate Voltage Regulating Effects

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors