Abstract:This Review provides a thorough description of the experimental progress on the InN family and other relevant compounds. Although InN is of great interest, many of its properties are not well understood and are still puzzling researchers with a number of unexpected effects. These include a surprisingly small energy gap, sensitivity to applied pressure in terms of lattice stability, and poor miscibility with compounds with smaller lattice parameters, such as GaN and AlN. Special features of InN under pressure are highlighted, such as the effect of conduction band filling and the strong pressure dependence of the effective mass. Several negative and positive effects due to the presence of In have been observed. We highlight their implications for InN-based alloys and quantum structures, which are crucial materials in modern optoelectronics (light emitting diodes and laser diodes). These effects include In clustering, large piezoelectricity resulting in strong internal electric fields that reduce the optical gain in nitride heterostructures, and difficulties in growing high-In superlattices and other quantum structures. All of these effects pose challenges that need to be addressed. We show that theoretical explanations allow for the clarification of puzzling experimental observations. Discussed are (i) a reformulation of the rule describing the bandgap dependence on pressure in all III–V semiconductors; (ii) the very large bandgap curvatures in nitride alloys; and (iii) the discrepancies between theory and experiment in the optical emission from InN/GaN superlattices, leading to the conclusion that epitaxial growth of high In content InxGa1−xN (x > 0.3) quantum wells on GaN is not possible.

Stability and electronic structure of single-walled InN nanotubes

The stability and electronic structure of single-walled ZnO nanotubes by density functional theory

Electronic Structures of Ingan2 Nanotubes

Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method

Theoretical Prediction of a Graphene-Like Structure of Indium Nitride: A Promising Excellent Material for Optoelectronics

A Density Functional Theory Study of Selfassembled (InN)12n (n=1-9) Nanowires and Nanosheets: Implications for CO2 Capture and Optoelectronic Applications

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Stability of and conduction in single-walled Si$_2$BN nanotubes

Silicon and III-V compound nanotubes: structural and electronic properties

Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates

Characteristics and Fabrications of InN Nanowire Material

Template-Free Synthesis Of Helical Hexagonal Microtubes Of Indium Nitride

Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires

First-principles electronic structure study of InxGa 1-xAs nanotubes and InAs/GaAs nanotube superlattices

Special role of indium nitride in the properties of related compounds and quantum structures

First principles study of electronic and structural properties of single walled zigzag boron nitride nanotubes doped with the elements of group IV

Structure Stability Of I-Type Carbon Nanotube Junctions

First-principles studies of strain-tunable InN monolayer: Applications for switching and optoelectronic devices

Bismuth Nanotubes: Potential Semiconducting Nanomaterials

First-principles Calculations on the Open End of Single-Walled AlN Nanotubes