Abstract:We derive the relations between the analogous seven Luttinger-Kohn parameters and six Rashba-Sheka-Pikus parameters for wurtzite semiconductors, which can be used to investigate the electronic structures of some wurtzite semiconductors such as AIN and InN materials, including their low-dimensional structures. As an example, the electronic structures of AIN and InN nanowires are calculated by using the derived relations and six band effective-mass k.p theory. Interestingly, it is found that the ground hole state of AIN nanowires is always a pure S state whether the radius R is small (1 nm) or large (6 nm), and the ground hole state only contains vertical bar Z Bloch orbital component. Therefore, AIN nanowires is the ideal low-dimensional material for the production of purely linearly polarized it light, unlike ZnO nanowires, which emits plane-polarized a light. However, the ground hole state of InN nanowires can be tuned from a pure S state to a mixed P state when the radius R is larger than 2.6 nm, which will make the polarized properties of the lowest optical transition changes from linearly polarized pi light to plane-polarized sigma light. Meanwhile, the valence band structures of InN nanowires will present strong band crossings when the radius R increases to 6 nm, and through the detail analysis of possible transitions of InN nanowires at the Gamma point, we find some of the neighbor optical transitions are almost degenerate, because the spin-orbit splitting energy of InN material is only 0.001 eV. Therefore, it is concluded that the electronic structures and optical properties of InN nanowires present great differences with that of AIN nanowires. (C) 2017 Elsevier Ltd. All rights reserved.

Characteristics and Fabrications of InN Nanowire Material

Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Fabrication and Application of InN Films

Fabrication and Characteristics of In2O3 Nanowires

Preparation and Characterization of InN Nanofibers

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Synthesis, Microstructure, Growth Mechanism and Photoluminescence of High Quality [0001]-Oriented Inn Nanowires and Nanonecklaces

Low Pressure Chemical Vapor Deposition Synthesis of InN Nanowires and Their Field Electron Emission

The Electronic Structures of AlN and InN Wurtzite Nanowires

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

Characteristics and Fabrication Technology of GaN Nanowire Material

Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Stability and electronic structure of single-walled InN nanotubes

Synthesis, Characterization and Device Applications of InGaAs Nanowires

Calculations of Defect States in Various Sizes of InN Nanowires.

Nanowires for Optoelectronic Device Applications

Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

[0001]-Oriented Inn Nanoleaves and Nanowires: Synthesis, Growth Mechanism and Optical Properties

Large-Scale Growth of In2o3 Nanowires and Their Optical Properties