Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Characteristics and Fabrication Technology of GaN Nanowire Material

Research and Recent Progress in GaN-based Semiconductor LED

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Fabrication and Characterization of Β-Ga2o3 Optical Nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Characteristics and Fabrications of InN Nanowire Material

Ohmic Contacts in GaN-based Devices

Broadband and ascendant nonlinear optical properties of the wide bandgap material GaN nanowires

High-yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication

Synthesis and Field Emission Studies of Tower-Like GaN Nanowires.

Research progress in the postprocessing and application of GaN crystal

Study of the epitaxial growth, physical properties and electronic devices of GaN-based semiconductor heterostructures

Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

High Performance Gallium Nitride Based Blue Light Emitting Diode Material Epitaxy and Dry Etching Fabrication Technology

Single gallium nitride nanowire lasers

Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

Research Progress of GaN-based LED on Silicon

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Axial GaN Nanowire‐Based LEDs