Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Synthesis and Field Emission Studies of Tower-Like GaN Nanowires.

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Needlelike Bicrystalline GaN Nanowires with Excellent Field Emission Properties.

Quasi-Aligned Single-Crystalline Gan Nanowire Arrays

Synthesis and characterization of high purity GaN nanowires

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Single-crystalline Wurtzite GaN Nanowires and Zigzagged Nanostructures Fabricated by Sublimation Sandwich Method

The growth and field electron emission of InGaN nanowires

High-yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer

Well-Aligned Single-Crystalline GaN Nanocolumns and Their Field Emission Properties

Synthesis and Characterization of Glomerate GaN Nanowires

Synthesis, photoluminescence and field emission properties of well aligned/well patterned conical shape GaN nanorods

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Synthesis and Characterization of Zn-doped GaN Zigzag Nanowires

Structure and Electrical Property of Gallium Nitride Nanowires Synthesized in Plasma-Enhanced Hot Filament Chemical Vapor Deposition System

Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence.

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires