Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition

JiShi Cui,Hongdi Xiao,Jianqiang Liu,CaiNa Luan,Ziwu Ji,Haiyan Pei

DOI: https://doi.org/10.1016/j.jallcom.2013.01.195

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:Two kinds of novel GaN nanotowers on silicon (1 1 1) substrates by employing ultrathin Ni catalyst films (0.2 nm) were successfully synthesized at different growth temperatures using a metal-organic chemical vapor deposition system. Scanning electron microscopy indicated that the density and growth direction of the nanotowers were highly sensitive to changes of growth temperature. The morphologies were characterized in detail, and showed triangular and hexagonal nanotowers which were oriented predominantly along [112̄0] and [0 0 0 1] directions, respectively. Finally, a new growth mechanism is stated to explain the growth of these two novel GaN nanotowers.© 2013 Elsevier B.V. All rights reserved.