Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Effects of isochronal thermal annealing and hydrogenation on photoluminescence from n-type GaN films grown by metalorganic vapor phase epitaxy

Gallium nitride nanowires grown by hydride vapor phase epitaxy

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

A low cost, green method to synthesize GaN nanowires

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Effect of Hydrogenation on the Luminescence Evolution of Gan under Low Energy Electron Beam Irradiation

Growth of GaN Nanowires on Graphene